| PART |
Description |
Maker |
| EC001121 EC002637 27440402 1766356 |
Base strip - GMSTBA 2,5/ 3-G - 1766356
|
PHOENIX CONTACT
|
| 710170 |
Base strip
|
PHOENIX CONTACT
|
| 1803277 27440402 |
Base strip - MC 1,5/ 2-G-3,81 - 1803277
|
PHOENIX CONTACT
|
| KU300WCNU KU12 |
60 A, BARRIER STRIP TERMINAL BLOCK, 2 ROWS, 1 DECK
Base Mount Double Row Terminal Blocks
|
COOPER INDUSTRIES
List of Unclassifed Man...
|
| EPE6125GD |
Low Profile 10 Base-T Interface Module
DATACOM TRANSFORMER FOR 10 BASE-T APPLICATION(S)
|
PCA ELECTRONICS INC.
|
| EPG4014S-RCTR |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
Samsung Semiconductor Co., Ltd.
|
| EPG4001S EPG4001S-RC EPG4001S-15 |
11000Base-T Module
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
PCA ELECTRONICS INC.
N.A.
ETC[ETC]
List of Unclassifed Manufacturers
Samsung Semiconductor Co., Ltd.
|
| EPG4012S |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S)
|
|
| G1PM109N-VLF G1PM109N-V-LF |
1000 BASE ?T MAGNETICS MODULES
Compliant with IEEE 802.3ab standard for 1000 BASE-T
|
Bothhand USA, LP.
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| SY7140-3DZ SY7140-5LOU-Q SY7240-5LOU-Q SY7340-5LOU |
VALVE BASE 110V
VALVE BASE 24VDC
High Efficient Rectifier Diodes
阀10伏特
阀门基10伏特
VALVE BODY 24V DC 阀24V直流
|
Bourns, Inc.
|
